SWYN4N65DD Datasheet. Specs and Replacement

Type Designator: SWYN4N65DD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm

Package: TO220F

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SWYN4N65DD datasheet

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SWYN4N65DD

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2 ... See More ⇒

Detailed specifications: SWX090R15ET, SWX170R15ET, SWX38N65K2F, SWY10N65D, SWY12N65D, SWY4N60D, SWY640D, SWY7N65D, 7N65, SWYN7N65D, SWYS069R10VS, S10H06R, S10H06RN, S10H06RP, S10H06S, S10H07M, S10H08R

Keywords - SWYN4N65DD MOSFET specs

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