SWYN4N65DD MOSFET. Datasheet pdf. Equivalent
Type Designator: SWYN4N65DD
Marking Code: SW4N65DD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 29.8 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 61 pF
Maximum Drain-Source On-State Resistance (Rds): 2.9 Ohm
Package: TO220F
SWYN4N65DD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWYN4N65DD Datasheet (PDF)
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SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2.4)@VGS=10V RDS(ON) : 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .