All MOSFET. SWYN7N65D Datasheet


SWYN7N65D MOSFET. Datasheet pdf. Equivalent

   Type Designator: SWYN7N65D
   Marking Code: SW7N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 27.8 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 30 nC
   Rise Time (tr): 36 nS
   Drain-Source Capacitance (Cd): 108 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
   Package: TO220F

 SWYN7N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SWYN7N65D Datasheet (PDF)

 ..1. Size:917K  samwin


SW7N65DN-channel Enhanced mode TO-220FTN MOSFETFeaturesTO-220FTBVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.1)@VGS=10VRDS(ON) : 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 12D 100% Avalanche Tested3 Application:Charger,LED,PC Power1. Gate 2. Drain 3. Source GGeneral DescriptionSThis power MOSFET is produced wi

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