SWYN7N65D Datasheet. Specs and Replacement

Type Designator: SWYN7N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

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SWYN7N65D datasheet

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SWYN7N65D

SW7N65D N-channel Enhanced mode TO-220FTN MOSFET Features TO-220FT BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 2 D 100% Avalanche Tested 3 Application Charger,LED,PC Power 1. Gate 2. Drain 3. Source G General Description S This power MOSFET is produced wi... See More ⇒

Detailed specifications: SWX170R15ET, SWX38N65K2F, SWY10N65D, SWY12N65D, SWY4N60D, SWY640D, SWY7N65D, SWYN4N65DD, IRFP250N, SWYS069R10VS, S10H06R, S10H06RN, S10H06RP, S10H06S, S10H07M, S10H08R, S10H08RN

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