All MOSFET. SWYN7N65D Datasheet

 

SWYN7N65D Datasheet and Replacement


   Type Designator: SWYN7N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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SWYN7N65D Datasheet (PDF)

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SWYN7N65D

SW7N65DN-channel Enhanced mode TO-220FTN MOSFETFeaturesTO-220FTBVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.1)@VGS=10VRDS(ON) : 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 12D 100% Avalanche Tested3 Application:Charger,LED,PC Power1. Gate 2. Drain 3. Source GGeneral DescriptionSThis power MOSFET is produced wi

Datasheet: SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , IRFP250N , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M , S10H08R , S10H08RN .

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