SWYN7N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: SWYN7N65D
Marking Code: SW7N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
SWYN7N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWYN7N65D Datasheet (PDF)
swyn7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220FTN MOSFETFeaturesTO-220FTBVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.1)@VGS=10VRDS(ON) : 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 12D 100% Avalanche Tested3 Application:Charger,LED,PC Power1. Gate 2. Drain 3. Source GGeneral DescriptionSThis power MOSFET is produced wi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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