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SWYN7N65D PDF Specs and Replacement


   Type Designator: SWYN7N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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SWYN7N65D PDF Specs

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SWYN7N65D

SW7N65D N-channel Enhanced mode TO-220FTN MOSFET Features TO-220FT BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 2 D 100% Avalanche Tested 3 Application Charger,LED,PC Power 1. Gate 2. Drain 3. Source G General Description S This power MOSFET is produced wi... See More ⇒

Detailed specifications: SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , IRFP250N , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M , S10H08R , S10H08RN .

History: JFQM3N120E | STD11N50M2 | JFFM9N50C | QM3014M3

Keywords - SWYN7N65D MOSFET specs

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