SWYN7N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: SWYN7N65D
Marking Code: SW7N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 27.8 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 108 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO220F
SWYN7N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWYN7N65D Datasheet (PDF)
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swyn7n65d.pdf
swyn7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220FTN MOSFETFeaturesTO-220FTBVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.1)@VGS=10VRDS(ON) : 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 12D 100% Avalanche Tested3 Application:Charger,LED,PC Power1. Gate 2. Drain 3. Source GGeneral DescriptionSThis power MOSFET is produced wi
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
