SWYS069R10VS Datasheet and Replacement
Type Designator: SWYS069R10VS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 453 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220F
SWYS069R10VS substitution
SWYS069R10VS Datasheet (PDF)
swys069r10vs.pdf
SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.4m)@VGS=4.5V ID : 57A (Typ 7.8m)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 9.4m@VGS=4.5V Improved dv/dt Capability 7.8m@VGS=10V 100% Avalanche Tested 1 2 Application:Synchronous Rectification, 3 2
Datasheet: SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , IRF9540 , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M , S10H08R , S10H08RN , S10H08RP .
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