All MOSFET. SWYS069R10VS Datasheet

 

SWYS069R10VS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWYS069R10VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 42 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 57 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 35 nS
   Drain-Source Capacitance (Cd): 453 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
   Package: TO220F

 SWYS069R10VS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWYS069R10VS Datasheet (PDF)

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swys069r10vs.pdf

SWYS069R10VS
SWYS069R10VS

SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.4m)@VGS=4.5V ID : 57A (Typ 7.8m)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 9.4m@VGS=4.5V Improved dv/dt Capability 7.8m@VGS=10V 100% Avalanche Tested 1 2 Application:Synchronous Rectification, 3 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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