SWYS069R10VS Datasheet. Specs and Replacement

Type Designator: SWYS069R10VS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220F

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SWYS069R10VS datasheet

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SWYS069R10VS

SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.4m )@VGS=4.5V ID 57A (Typ 7.8m )@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) 9.4m @VGS=4.5V Improved dv/dt Capability 7.8m @VGS=10V 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 2 ... See More ⇒

Detailed specifications: SWX38N65K2F, SWY10N65D, SWY12N65D, SWY4N60D, SWY640D, SWY7N65D, SWYN4N65DD, SWYN7N65D, IRF630, S10H06R, S10H06RN, S10H06RP, S10H06S, S10H07M, S10H08R, S10H08RN, S10H08RP

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