SWYS069R10VS PDF and Equivalents Search

 

SWYS069R10VS Specs and Replacement


   Type Designator: SWYS069R10VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220F
 

 SWYS069R10VS substitution

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SWYS069R10VS datasheet

 ..1. Size:820K  samwin
 swys069r10vs.pdf pdf_icon

SWYS069R10VS

SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.4m )@VGS=4.5V ID 57A (Typ 7.8m )@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) 9.4m @VGS=4.5V Improved dv/dt Capability 7.8m @VGS=10V 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 2 ... See More ⇒

Detailed specifications: SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , IRF630 , S10H06R , S10H06RN , S10H06RP , S10H06S , S10H07M , S10H08R , S10H08RN , S10H08RP .

Keywords - SWYS069R10VS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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