SWYS069R10VS MOSFET. Datasheet pdf. Equivalent
Type Designator: SWYS069R10VS
Marking Code: SW069R10VS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 42 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 453 pF
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: TO220F
SWYS069R10VS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWYS069R10VS Datasheet (PDF)
..1. Size:820K samwin
swys069r10vs.pdf
swys069r10vs.pdf
SW069R10VS N-channel Enhanced mode TO-220FTS MOSFET Features TO-220FTS BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.4m)@VGS=4.5V ID : 57A (Typ 7.8m)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 9.4m@VGS=4.5V Improved dv/dt Capability 7.8m@VGS=10V 100% Avalanche Tested 1 2 Application:Synchronous Rectification, 3 2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
