S65N07M MOSFET Datasheet: N-Ch, 65V, 71A. Full specification with pinout and replacement list

S65N07M Specs and Replacement

Type Designator: S65N07M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 71 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 366 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

S65N07M substitution

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S65N07M datasheet

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S65N07M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=65V,ID=71A DC Motor Control Rds(on)(typ)=6.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G S S Package TO-252... See More ⇒

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HMS65N03Q N-Channel Super Trench Power MOSFET Description The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific... See More ⇒

Detailed specifications: S60N15R, S60N15RN, S60N15RP, S60N15S, S60N18R, S60N18RN, S60N18RP, S60N18S, IRF1405, S68N08RN, S68N08RP, S68N08ZR, S68N08ZS, S68N08ZRN, S68N08ZRP, S70N06R, S70N06RN