All MOSFET. S65N07M Datasheet

 

S65N07M Datasheet and Replacement


   Type Designator: S65N07M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 71 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 366 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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S65N07M Datasheet (PDF)

 ..1. Size:291K  cn si-tech
 s65n07m.pdf pdf_icon

S65N07M

S65N07M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=65V,ID=71A DC Motor Control Rds(on)(typ)=6.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G S S Package TO-252

 9.1. Size:519K  cn hmsemi
 hms65n03q.pdf pdf_icon

S65N07M

HMS65N03QN-Channel Super Trench Power MOSFET Description The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

Datasheet: S60N15R , S60N15RN , S60N15RP , S60N15S , S60N18R , S60N18RN , S60N18RP , S60N18S , NCEP15T14 , S68N08RN , S68N08RP , S68N08ZR , S68N08ZS , S68N08ZRN , S68N08ZRP , S70N06R , S70N06RN .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

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