S80N22T Datasheet and Replacement
Type Designator: S80N22T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 196 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1068 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO247
S80N22T substitution
S80N22T Datasheet (PDF)
s80n22t.pdf

S80N22T SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=196A DC Motor Control Rds(on)(typ)=3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DGGDSSPackage TO-247 Pack
Datasheet: S8045RP , S8045S , S80N08R , S80N08RN , S80N08RP , S80N08S , S80N10RN , S80N10RP , IRF540N , S85N042R , S85N042RN , S85N042RP , S85N042S , S85N048S , S85N16R , S85N16RN , S85N16RP .
History: PI506BZ | IRFU2905ZPBF | 2N3687 | BL23N50-W | CJA9452 | HGN042N10A | MPSY65M650
Keywords - S80N22T MOSFET datasheet
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History: PI506BZ | IRFU2905ZPBF | 2N3687 | BL23N50-W | CJA9452 | HGN042N10A | MPSY65M650



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