S85N16R MOSFET. Datasheet pdf. Equivalent
Type Designator: S85N16R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 153 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 81 nC
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 665 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
Package: TO220
S85N16R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
S85N16R Datasheet (PDF)
..1. Size:2322K cn si-tech
s85n16r s85n16s s85n16rn s85n16rp.pdf
s85n16r s85n16s s85n16rn s85n16rp.pdf
S85N16R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=85V,ID=153A DC Motor Control Rds(on)(typ)=4.6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
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