All MOSFET. HY3506P Datasheet

 

HY3506P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3506P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   Maximum Drain Current |Id|: 190 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 1010 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
   Package: TO220

 HY3506P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3506P Datasheet (PDF)

 ..1. Size:579K  1
hy3506p hy3506b.pdf

HY3506P
HY3506P

HY3506P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.5 m(typ.) @ VGS=10V 100% avalanche testedSDG Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

 9.1. Size:923K  1
hy3503c2.pdf

HY3506P
HY3506P

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.2. Size:923K  hymexa
hy3503c2.pdf

HY3506P
HY3506P

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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