HY3506P PDF and Equivalents Search

 

HY3506P Specs and Replacement


   Type Designator: HY3506P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

 HY3506P substitution

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HY3506P datasheet

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 hy3506p hy3506b.pdf pdf_icon

HY3506P

HY3506P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and ... See More ⇒

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HY3506P

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 9.2. Size:923K  hymexa
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HY3506P

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Detailed specifications: S85N048S , S85N16R , S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 , 10N60 , HY3506B , LTP70N06P , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S .

Keywords - HY3506P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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