All MOSFET. LTP70N06P Datasheet

 

LTP70N06P MOSFET. Datasheet pdf. Equivalent


   Type Designator: LTP70N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 67 nC
   Rise Time (tr): 10 nS
   Drain-Source Capacitance (Cd): 410 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm
   Package: TO220

 LTP70N06P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LTP70N06P Datasheet (PDF)

 ..1. Size:743K  1
ltp70n06p.pdf

LTP70N06P
LTP70N06P

LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m, DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

 6.1. Size:590K  liteon
ltp70n06.pdf

LTP70N06P
LTP70N06P

LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m, DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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