All MOSFET. LTP70N06P Datasheet

 

LTP70N06P Datasheet and Replacement


   Type Designator: LTP70N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220
 

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LTP70N06P Datasheet (PDF)

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LTP70N06P

LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m, DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

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LTP70N06P

LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m, DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit

Datasheet: S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , HY3506B , IRFP250N , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL .

Keywords - LTP70N06P MOSFET datasheet

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