LTP70N06P MOSFET Datasheet: N-Ch, 60V, 80A. Full specification with pinout and replacement list

LTP70N06P Specs and Replacement

Type Designator: LTP70N06P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 410 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO220

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LTP70N06P datasheet

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LTP70N06P N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 11.5 m , DC-DC converter and DC motor control Typ = 9 m UPS ID = 80 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit ... See More ⇒

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LTP70N06 N-Channel 60V Power MOSFET Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching RDS(ON ) = 14 m , DC-DC converter and DC motor control Typ = 10 m UPS ID = 70 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit ... See More ⇒

Detailed specifications: S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , HY3506B , IRFB4115 , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL .