All MOSFET. HG3P056N20S Datasheet

 

HG3P056N20S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HG3P056N20S
   Marking Code: G3P056N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 600 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 219 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 112 nC
   Rise Time (tr): 44 nS
   Drain-Source Capacitance (Cd): 840 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm
   Package: TO-3P

 HG3P056N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HG3P056N20S Datasheet (PDF)

 ..1. Size:990K  cn hunteck
hg3p056n20s.pdf

HG3P056N20S
HG3P056N20S

P-1HG3P056N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching4.7RDS(on),max mW Enhanced Body diode dv/dt capability219 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

 9.1. Size:986K  cn hunteck
hg3p095n25s.pdf

HG3P056N20S
HG3P056N20S

P-1HG3P095N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching8.5RDS(on),typ mW Enhanced Body diode dv/dt capability164 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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