All MOSFET. HG3P056N20S Datasheet

 

HG3P056N20S Datasheet and Replacement


   Type Designator: HG3P056N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 219 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO-3P
 

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HG3P056N20S Datasheet (PDF)

 ..1. Size:990K  cn hunteck
 hg3p056n20s.pdf pdf_icon

HG3P056N20S

P-1HG3P056N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching4.7RDS(on),max mW Enhanced Body diode dv/dt capability219 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

 9.1. Size:986K  cn hunteck
 hg3p095n25s.pdf pdf_icon

HG3P056N20S

P-1HG3P095N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching8.5RDS(on),typ mW Enhanced Body diode dv/dt capability164 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

Datasheet: S85N16S , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , HY3506B , LTP70N06P , NCE65TF130T , IRFB4115 , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL , HGA046NE6A , HGA046NE6AL .

History: FS2312 | IRL3705ZL

Keywords - HG3P056N20S MOSFET datasheet

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