All MOSFET. HG3P056N20S Datasheet

 

HG3P056N20S Datasheet and Replacement


   Type Designator: HG3P056N20S
   Marking Code: G3P056N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 219 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 112 nC
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO-3P
 

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HG3P056N20S Datasheet (PDF)

 ..1. Size:990K  cn hunteck
 hg3p056n20s.pdf pdf_icon

HG3P056N20S

P-1HG3P056N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching4.7RDS(on),max mW Enhanced Body diode dv/dt capability219 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

 9.1. Size:986K  cn hunteck
 hg3p095n25s.pdf pdf_icon

HG3P056N20S

P-1HG3P095N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching8.5RDS(on),typ mW Enhanced Body diode dv/dt capability164 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NP109N055PUJ | BSC054N04NSG | STD105N10F7AG | FX50SMJ-2

Keywords - HG3P056N20S MOSFET datasheet

 HG3P056N20S cross reference
 HG3P056N20S equivalent finder
 HG3P056N20S lookup
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 HG3P056N20S replacement

 

 
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