HG3P095N25S Specs and Replacement
Type Designator: HG3P095N25S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 164 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 696 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-3P
HG3P095N25S substitution
- MOSFET ⓘ Cross-Reference Search
HG3P095N25S datasheet
hg3p095n25s.pdf
P-1 HG3P095N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching 8.5 RDS(on),typ mW Enhanced Body diode dv/dt capability 164 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools Dra... See More ⇒
hg3p056n20s.pdf
P-1 HG3P056N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching 4.7 RDS(on),max mW Enhanced Body diode dv/dt capability 219 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools Dra... See More ⇒
Detailed specifications: CRST037N10N, CRSS035N10N, DP3080, HY3506P, HY3506B, LTP70N06P, NCE65TF130T, HG3P056N20S, 8205A, HGA025N06S, HGA028NE6AL, HGA040N06S, HGA040N06SL, HGA045NE4SL, HGA046NE6A, HGA046NE6AL, HGA053N06S
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