All MOSFET. HG3P095N25S Datasheet

 

HG3P095N25S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HG3P095N25S
   Marking Code: G3P095N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 164 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 116 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 696 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-3P

 HG3P095N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HG3P095N25S Datasheet (PDF)

 ..1. Size:986K  cn hunteck
 hg3p095n25s.pdf

HG3P095N25S HG3P095N25S

P-1HG3P095N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching8.5RDS(on),typ mW Enhanced Body diode dv/dt capability164 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

 9.1. Size:990K  cn hunteck
 hg3p056n20s.pdf

HG3P095N25S HG3P095N25S

P-1HG3P056N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching4.7RDS(on),max mW Enhanced Body diode dv/dt capability219 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BUK6607-75C

 

 
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