HG3P095N25S Datasheet and Replacement
Type Designator: HG3P095N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 164 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 696 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-3P
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HG3P095N25S Datasheet (PDF)
hg3p095n25s.pdf

P-1HG3P095N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching8.5RDS(on),typ mW Enhanced Body diode dv/dt capability164 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra
hg3p056n20s.pdf

P-1HG3P056N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching4.7RDS(on),max mW Enhanced Body diode dv/dt capability219 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDra
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | SFFX054Z | TK7P65W
Keywords - HG3P095N25S MOSFET datasheet
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History: CHM85A3PAGP | SFFX054Z | TK7P65W



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