All MOSFET. HGA028NE6AL Datasheet

 

HGA028NE6AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA028NE6AL
   Marking Code: GA028NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1625 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO-220F

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HGA028NE6AL Datasheet (PDF)

 ..1. Size:919K  cn hunteck
hga028ne6al.pdf

HGA028NE6AL
HGA028NE6AL

HGA028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an

 9.1. Size:774K  cn hunteck
hga025n06s.pdf

HGA028NE6AL
HGA028NE6AL

HGA025N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-220F 1.9RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Powe

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History: NTMFS4C05N

 

 
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