HGA028NE6AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGA028NE6AL
Marking Code: GA028NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1625 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO-220F
HGA028NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGA028NE6AL Datasheet (PDF)
hga028ne6al.pdf
HGA028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an
hga025n06s.pdf
HGA025N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-220F 1.9RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Powe
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
