All MOSFET. HGA028NE6AL Datasheet

 

HGA028NE6AL Datasheet and Replacement


   Type Designator: HGA028NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO-220F
 

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HGA028NE6AL Datasheet (PDF)

 ..1. Size:919K  cn hunteck
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HGA028NE6AL

HGA028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an

 9.1. Size:774K  cn hunteck
 hga025n06s.pdf pdf_icon

HGA028NE6AL

HGA025N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-220F 1.9RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Powe

Datasheet: DP3080 , HY3506P , HY3506B , LTP70N06P , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , AON7408 , HGA040N06S , HGA040N06SL , HGA045NE4SL , HGA046NE6A , HGA046NE6AL , HGA053N06S , HGA053N06SL , HGA055N10SL .

History: VBM17R10 | 2SK1915

Keywords - HGA028NE6AL MOSFET datasheet

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