HGA028NE6AL Specs and Replacement
Type Designator: HGA028NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1625 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO-220F
HGA028NE6AL substitution
- MOSFET ⓘ Cross-Reference Search
HGA028NE6AL datasheet
hga028ne6al.pdf
HGA028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.7 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 82 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching an... See More ⇒
hga025n06s.pdf
HGA025N06S P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-220F 1.9 RDS(on),typ m Enhanced Body diode dv/dt capability 109 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2 Powe... See More ⇒
Detailed specifications: DP3080, HY3506P, HY3506B, LTP70N06P, NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, IRFP250N, HGA040N06S, HGA040N06SL, HGA045NE4SL, HGA046NE6A, HGA046NE6AL, HGA053N06S, HGA053N06SL, HGA055N10SL
Keywords - HGA028NE6AL MOSFET specs
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