All MOSFET. HGA046NE6A Datasheet

 

HGA046NE6A Datasheet and Replacement


   Type Designator: HGA046NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 769 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

HGA046NE6A Datasheet (PDF)

 ..1. Size:902K  cn hunteck
hga046ne6a.pdf pdf_icon

HGA046NE6A

P-1HGA046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability53 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

 0.1. Size:903K  cn hunteck
hga046ne6al.pdf pdf_icon

HGA046NE6A

P-1HGA046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness53 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.1. Size:772K  cn hunteck
hga040n06s.pdf pdf_icon

HGA046NE6A

HGA040N06S P-160V N-Ch Power MOSFET60 VVDSFeature3.4RDS(on),typ m Optimized for high speed switching76 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitP

 9.2. Size:791K  cn hunteck
hga045ne4sl.pdf pdf_icon

HGA046NE6A

HGA045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMP

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SPB80N06S-08 | CPH6347 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - HGA046NE6A MOSFET datasheet

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