HGA046NE6A Specs and Replacement
Type Designator: HGA046NE6A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 769 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO-220F
HGA046NE6A substitution
- MOSFET ⓘ Cross-Reference Search
HGA046NE6A datasheet
hga046ne6a.pdf
P-1 HGA046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 53 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin... See More ⇒
hga040n06s.pdf
HGA040N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.4 RDS(on),typ m Optimized for high speed switching 76 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit P... See More ⇒
hga045ne4sl.pdf
HGA045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 59 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMP... See More ⇒
Detailed specifications: NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL, HGA040N06S, HGA040N06SL, HGA045NE4SL, 2SK3878, HGA046NE6AL, HGA053N06S, HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A, HGA059N12S, HGA059N12SL
Keywords - HGA046NE6A MOSFET specs
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