All MOSFET. HGA110N10SL Datasheet

 

HGA110N10SL Datasheet and Replacement


   Type Designator: HGA110N10SL
   Marking Code: GA110N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220F
 

 HGA110N10SL substitution

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HGA110N10SL Datasheet (PDF)

 ..1. Size:793K  cn hunteck
 hga110n10sl.pdf pdf_icon

HGA110N10SL

HGA110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic LevelVGS=10V9.0RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V11RDS(on),typ m Enhanced Avalanche Ruggedness37.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS

 9.1. Size:1163K  cn hunteck
 hga115n15s.pdf pdf_icon

HGA110N10SL

HGA115N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.5RDS(on),max mW Enhanced Body diode dv/dt capability 42 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Tel

Datasheet: HGA090N06SL , HGA093N12SL , HGA098N10A , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL , HGA105N15M , IRLB4132 , HGA115N15S , HGA120N10A , HGA130N12S , HGA130N12SL , HGA155N15S , HGA170N10A , HGA170N10AL , HGA190N15S .

History: RFP10N12 | SIHFD020 | AM6921P

Keywords - HGA110N10SL MOSFET datasheet

 HGA110N10SL cross reference
 HGA110N10SL equivalent finder
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