HGA110N10SL Specs and Replacement

Type Designator: HGA110N10SL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 162 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220F

HGA110N10SL substitution

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HGA110N10SL datasheet

 ..1. Size:793K  cn hunteck
 hga110n10sl.pdf pdf_icon

HGA110N10SL

HGA110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level VGS=10V 9.0 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 11 RDS(on),typ m Enhanced Avalanche Ruggedness 37.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS ... See More ⇒

 9.1. Size:1163K  cn hunteck
 hga115n15s.pdf pdf_icon

HGA110N10SL

HGA115N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 11.5 RDS(on),max mW Enhanced Body diode dv/dt capability 42 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Tel... See More ⇒

Detailed specifications: HGA090N06SL, HGA093N12SL, HGA098N10A, HGA098N10AL, HGA098N10S, HGA100N12S, HGA100N12SL, HGA105N15M, CS150N03A8, HGA115N15S, HGA120N10A, HGA130N12S, HGA130N12SL, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S

Keywords - HGA110N10SL MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.