All MOSFET. HGA115N15S Datasheet

 

HGA115N15S Datasheet and Replacement


   Type Designator: HGA115N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 239 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO-220F
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HGA115N15S Datasheet (PDF)

 ..1. Size:1163K  cn hunteck
 hga115n15s.pdf pdf_icon

HGA115N15S

HGA115N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.5RDS(on),max mW Enhanced Body diode dv/dt capability 42 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Tel

 9.1. Size:793K  cn hunteck
 hga110n10sl.pdf pdf_icon

HGA115N15S

HGA110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic LevelVGS=10V9.0RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V11RDS(on),typ m Enhanced Avalanche Ruggedness37.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS

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History: VBNC1303 | IRFS4010PBF

Keywords - HGA115N15S MOSFET datasheet

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