HGA1K2N20ML Datasheet and Replacement
Type Designator: HGA1K2N20ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220F
HGA1K2N20ML substitution
HGA1K2N20ML Datasheet (PDF)
hga1k2n20ml.pdf
HGA1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness6.57 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High
hga1k2n25ml.pdf
HGA1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe
Datasheet: HGA130N12S , HGA130N12SL , HGA155N15S , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , 2SK3568 , HGA1K2N25ML , HGA2K4N25ML , HGA320N20S , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A .
History: STQ1NK60ZR-AP | IRL1104L | SWI70N10V | IPP80N04S3-06 | HGA195N15S
Keywords - HGA1K2N20ML MOSFET datasheet
HGA1K2N20ML cross reference
HGA1K2N20ML equivalent finder
HGA1K2N20ML lookup
HGA1K2N20ML substitution
HGA1K2N20ML replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STQ1NK60ZR-AP | IRL1104L | SWI70N10V | IPP80N04S3-06 | HGA195N15S
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