HGA1K2N20ML Specs and Replacement
Type Designator: HGA1K2N20ML
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220F
HGA1K2N20ML substitution
- MOSFET ⓘ Cross-Reference Search
HGA1K2N20ML datasheet
hga1k2n20ml.pdf
HGA1K2N20ML P-1 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching, Logic Level 95 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 106 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 6.57 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High ... See More ⇒
hga1k2n25ml.pdf
HGA1K2N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 87 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 93 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Spe... See More ⇒
Detailed specifications: HGA130N12S, HGA130N12SL, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, 2SK3568, HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A
Keywords - HGA1K2N20ML MOSFET specs
HGA1K2N20ML cross reference
HGA1K2N20ML equivalent finder
HGA1K2N20ML pdf lookup
HGA1K2N20ML substitution
HGA1K2N20ML replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
