HGA1K2N25ML Datasheet and Replacement
Type Designator: HGA1K2N25ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220F
HGA1K2N25ML substitution
HGA1K2N25ML Datasheet (PDF)
hga1k2n25ml.pdf

HGA1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe
hga1k2n20ml.pdf

HGA1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness6.57 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High
Datasheet: HGA130N12SL , HGA155N15S , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , STP80NF70 , HGA2K4N25ML , HGA320N20S , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A .
History: CM10N65AFZ | SSM3J56MFV | CM10N60AZ | SPI11N60CFD | 3N80L-TA3-T | FDFS2P103 | AM7300N
Keywords - HGA1K2N25ML MOSFET datasheet
HGA1K2N25ML cross reference
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History: CM10N65AFZ | SSM3J56MFV | CM10N60AZ | SPI11N60CFD | 3N80L-TA3-T | FDFS2P103 | AM7300N



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