HGA2K4N25ML Specs and Replacement
Type Designator: HGA2K4N25ML
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 12 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-220F
HGA2K4N25ML substitution
- MOSFET ⓘ Cross-Reference Search
HGA2K4N25ML datasheet
hga2k4n25ml.pdf
HGA2K4N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 180 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 6.6 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High ... See More ⇒
Detailed specifications: HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, 5N60, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S
Keywords - HGA2K4N25ML MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
