All MOSFET. HGA2K4N25ML Datasheet

 

HGA2K4N25ML Datasheet and Replacement


   Type Designator: HGA2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-220F
 

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HGA2K4N25ML Datasheet (PDF)

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HGA2K4N25ML

HGA2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness6.6 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High

Datasheet: HGA155N15S , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , 13N50 , HGA320N20S , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S .

History: BSC011N03LS | AFN04N60T220FT | DMN5L06DMK | DMN5L06DMKQ | GSM9435WS | APT6038BLLG | 2N7002PV

Keywords - HGA2K4N25ML MOSFET datasheet

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