All MOSFET. HGA2K4N25ML Datasheet

 

HGA2K4N25ML MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA2K4N25ML
   Marking Code: GA2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-220F

 HGA2K4N25ML Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA2K4N25ML Datasheet (PDF)

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 hga2k4n25ml.pdf

HGA2K4N25ML HGA2K4N25ML

HGA2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness6.6 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High

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History: IPL60R360P6S | NTHL190N65S3HF

 

 
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