HGA320N20S Specs and Replacement
Type Designator: HGA320N20S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 124 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-220F
HGA320N20S substitution
- MOSFET ⓘ Cross-Reference Search
HGA320N20S datasheet
hga320n20s.pdf
HGA320N20S P-1 200V N-Ch Power MOSFET Feature High Speed Power Switching 200 V VDS Enhanced Body diode dv/dt capability TO-220 28 RDS(on),typ m Enhanced Avalanche Ruggedness 24 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit TO-220F Power Tools Drain UPS ... See More ⇒
Detailed specifications: HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML, RFP50N06, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, HGK018N06S
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