All MOSFET. HGA320N20S Datasheet

 

HGA320N20S Datasheet and Replacement


   Type Designator: HGA320N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-220F
 

 HGA320N20S substitution

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HGA320N20S Datasheet (PDF)

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HGA320N20S

HGA320N20S P-1200V N-Ch Power MOSFETFeature High Speed Power Switching200 VVDS Enhanced Body diode dv/dt capabilityTO-220 28RDS(on),typ m Enhanced Avalanche Ruggedness24 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitTO-220F Power ToolsDrain UPS

Datasheet: HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML , SKD502T , HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S , HGK018N06S .

Keywords - HGA320N20S MOSFET datasheet

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