All MOSFET. HGB009NE6A Datasheet

 

HGB009NE6A Datasheet and Replacement


   Type Designator: HGB009NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 6011 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: TO-263
 

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HGB009NE6A Datasheet (PDF)

 ..1. Size:1018K  cn hunteck
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HGB009NE6A

P-1HGB009NE6A65V N-Ch Power MOSFETFeature High Speed Power Smooth Switching65 VVDS Enhanced Body diode dv/dt capability0.78RDS(on),typ mW Enhanced Avalanche Ruggedness506 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Ci

Datasheet: HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML , HGA320N20S , IRFZ46N , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S , HGK018N06S , HGP019N06S .

History: AP9974AGP | AM2394NE | APT6029BLL | APT38N60BC6 | IRFS722 | CEU06N7 | HMS15N70F

Keywords - HGB009NE6A MOSFET datasheet

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