HGB009NE6A Specs and Replacement

Type Designator: HGB009NE6A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 6011 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm

Package: TO-263

HGB009NE6A substitution

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HGB009NE6A datasheet

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HGB009NE6A

P-1 HGB009NE6A 65V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 65 V VDS Enhanced Body diode dv/dt capability 0.78 RDS(on),typ mW Enhanced Avalanche Ruggedness 506 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Ci... See More ⇒

Detailed specifications: HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, SI2302, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, HGK018N06S, HGP019N06S

Keywords - HGB009NE6A MOSFET specs

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