HGB009NE6A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB009NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 240 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 6011 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
Package: TO-263
HGB009NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB009NE6A Datasheet (PDF)
..1. Size:1018K cn hunteck
hgb009ne6a.pdf
hgb009ne6a.pdf
P-1HGB009NE6A65V N-Ch Power MOSFETFeature High Speed Power Smooth Switching65 VVDS Enhanced Body diode dv/dt capability0.78RDS(on),typ mW Enhanced Avalanche Ruggedness506 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Ci
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