All MOSFET. HGK019NE6A Datasheet

 

HGK019NE6A Datasheet and Replacement


   Type Designator: HGK019NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 3042 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO-247
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HGK019NE6A Datasheet (PDF)

 ..1. Size:1282K  cn hunteck
hgb019ne6a hgk019ne6a hgp019ne6a.pdf pdf_icon

HGK019NE6A

HGB019NE6A HGP019NE6A, P-1HGK019NE6A65V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching TO-263 1.35RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited)180 A ID (Pack

 9.1. Size:863K  cn hunteck
hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGK019NE6A

HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

 9.2. Size:1000K  cn hunteck
hgb014n08a hgk014n08a.pdf pdf_icon

HGK019NE6A

, P-1HGB014N08A HGK014N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 1.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.3RDS(on),typ mW Enhanced Avalanche Ruggedness371 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificatio

 9.3. Size:1004K  cn hunteck
hgb012ne6a hgk012ne6a.pdf pdf_icon

HGK019NE6A

, P-1HGB012NE6A HGK012NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Smooth SwitchingTO-263 1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.2RDS(on),typ mW Enhanced Avalanche Ruggedness417 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectification

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2229 | 2SK3089 | ASDM30P11TD-R | MTB60B06Q8 | IRF530NPBF | WSF20N20 | TPC8035-H

Keywords - HGK019NE6A MOSFET datasheet

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 HGK019NE6A equivalent finder
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