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HGB043N15S Specs and Replacement


   Type Designator: HGB043N15S
   Marking Code: GB043N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 146 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 70 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-263
 

 HGB043N15S substitution

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HGB043N15S Specs

 ..1. Size:1049K  cn hunteck
hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB043N15S

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒

 9.1. Size:822K  cn hunteck
hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB043N15S

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒

 9.2. Size:919K  cn hunteck
hgb046ne6a hgp046ne6a.pdf pdf_icon

HGB043N15S

, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.3. Size:802K  cn hunteck
hgb042n10s hgp042n10s.pdf pdf_icon

HGB043N15S

, HGB042N10S HGP042N10S P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 3.7 RDS(on),typ m Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and... See More ⇒

Detailed specifications: HGP040N06S , HGB040N06SL , HGP040N06SL , HGB041N15S , HGB042N10A , HGP042N10A , HGB042N10S , HGP042N10S , 12N60 , HGK043N15S , HGP043N15S , HGB045N15S , HGK045N15S , HGP045N15S , HGB046NE6A , HGP046NE6A , HGB046NE6AL .

History: STD100N3LF3

Keywords - HGB043N15S MOSFET specs

 HGB043N15S cross reference
 HGB043N15S equivalent finder
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 HGB043N15S replacement

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