HGP046NE6AL Datasheet. Specs and Replacement
Type Designator: HGP046NE6AL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 108 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 870 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-220
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HGP046NE6AL datasheet
hgb046ne6al hgp046ne6al.pdf
, P-1 HGB046NE6AL HGP046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 4.2 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 6.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 108 A ID (Sillic... See More ⇒
hgb046ne6a hgp046ne6a.pdf
, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
hgb043n15s hgk043n15s hgp043n15s.pdf
, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒
hgb040n06sl hgp040n06sl.pdf
HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒
Detailed specifications: HGK043N15S, HGP043N15S, HGB045N15S, HGK045N15S, HGP045N15S, HGB046NE6A, HGP046NE6A, HGB046NE6AL, AON7410, HGB047N12S, HGP047N12S, HGB049N10S, HGP049N10S, HGB050N10A, HGP050N10A, HGB050N14S, HGP050N14S
Keywords - HGP046NE6AL MOSFET specs
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History: AOL1432 | CEP1195 | APT97N65B2C6 | APC65R190FM | 2SK3929-01MR | G3205 | AP4578GM
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