HGP046NE6AL Spec and Replacement
Type Designator: HGP046NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 108
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 870
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046
Ohm
Package:
TO-220
HGP046NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP046NE6AL Specs
..1. Size:922K cn hunteck
hgb046ne6al hgp046ne6al.pdf 
, P-1 HGB046NE6AL HGP046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 4.2 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 6.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 108 A ID (Sillic... See More ⇒
4.1. Size:919K cn hunteck
hgb046ne6a hgp046ne6a.pdf
, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
9.1. Size:1049K cn hunteck
hgb043n15s hgk043n15s hgp043n15s.pdf
, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒
9.2. Size:822K cn hunteck
hgb040n06sl hgp040n06sl.pdf
HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒
9.3. Size:802K cn hunteck
hgb042n10s hgp042n10s.pdf
, HGB042N10S HGP042N10S P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 3.7 RDS(on),typ m Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and... See More ⇒
9.4. Size:815K cn hunteck
hgb049n10s hgp049n10s.pdf
HGB049N10S HGP049N10S P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ m Enhanced Avalanche Ruggedness 152 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectification... See More ⇒
9.5. Size:906K cn hunteck
hgb047n12s hgp047n12s.pdf
, P-1 HGB047N12S HGP047N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 3.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 167 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi... See More ⇒
9.6. Size:793K cn hunteck
hgp045ne4sl.pdf
HGP045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SM... See More ⇒
9.7. Size:835K cn hunteck
hgb042n10a hgp042n10a.pdf
, HGB042N10A HGP042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature TO-263 3.4 RDS(on),typ m Optimized for high speed smooth switching TO-220 3.7 RDS(on),typ m Enhanced Body diode dv/dt capability 167 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application DC-DC Conversion Drain Hard Swit... See More ⇒
9.8. Size:783K cn hunteck
hgp042n10al.pdf
HGP042N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS Optimized for high speed smooth switching,Logic level 3.6 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 4.8 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 166 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drai... See More ⇒
9.9. Size:810K cn hunteck
hgb040n06s hgp040n06s.pdf
HGB040N06S HGP040N06S P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 3.1 RDS(on),typ m Optimized for high speed switching TO-220 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability 156 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synch... See More ⇒
9.10. Size:1055K cn hunteck
hgb045n15s hgk045n15s hgp045n15s.pdf
, P-1 HGB045N15S HGK045N15S HGP045N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 4.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.1 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 194 A ID (Sillicon Limited) Lead Free 180 A ID (Package Limited) ... See More ⇒
Detailed specifications: HGK043N15S
, HGP043N15S
, HGB045N15S
, HGK045N15S
, HGP045N15S
, HGB046NE6A
, HGP046NE6A
, HGB046NE6AL
, STP80NF70
, HGB047N12S
, HGP047N12S
, HGB049N10S
, HGP049N10S
, HGB050N10A
, HGP050N10A
, HGB050N14S
, HGP050N14S
.
History: SI4134DY
Keywords - HGP046NE6AL MOSFET specs
HGP046NE6AL cross reference
HGP046NE6AL equivalent finder
HGP046NE6AL lookup
HGP046NE6AL substitution
HGP046NE6AL replacement
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