HGB053N06SL Datasheet. Specs and Replacement

Type Designator: HGB053N06SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 793 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-263

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HGB053N06SL datasheet

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 hgb053n06sl hgp053n06sl.pdf pdf_icon

HGB053N06SL

HGB053N06SL , HGP053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 3.9 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 4.1 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 5.6 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 105 A ID... See More ⇒

 4.1. Size:926K  cn hunteck
 hgb053n06s hgp053n06s.pdf pdf_icon

HGB053N06SL

, P-1 HGB053N06S HGP053N06S 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 4.3 RDS(on),typ mW Optimized for high speed switching TO-220 4.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 112 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchrono... See More ⇒

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGB053N06SL

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.2. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf pdf_icon

HGB053N06SL

, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif... See More ⇒

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Detailed specifications: HGB049N10S, HGP049N10S, HGB050N10A, HGP050N10A, HGB050N14S, HGP050N14S, HGB053N06S, HGP053N06S, RFP50N06, HGP053N06SL, HGB055N12S, HGP055N12S, HGB057N15S, HGK057N15S, HGP057N15S, HGB058N08SL, HGP058N08SL

Keywords - HGB053N06SL MOSFET specs

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