All MOSFET. HGB053N06SL Datasheet

 

HGB053N06SL Datasheet and Replacement


   Type Designator: HGB053N06SL
   Marking Code: GB053N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 793 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-263
 

 HGB053N06SL substitution

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HGB053N06SL Datasheet (PDF)

 ..1. Size:820K  cn hunteck
 hgb053n06sl hgp053n06sl.pdf pdf_icon

HGB053N06SL

HGB053N06SL , HGP053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.9RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness4.1RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested5.6RDS(on),typ VGS=4.5V m Lead Free, Halogen Free105 AID

 4.1. Size:926K  cn hunteck
 hgb053n06s hgp053n06s.pdf pdf_icon

HGB053N06SL

, P-1HGB053N06S HGP053N06S60V N-Ch Power MOSFET60 VVDSFeatureTO-263 4.3RDS(on),typ mW Optimized for high speed switchingTO-220 4.6RDS(on),typ mW Enhanced Body diode dv/dt capability112 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchrono

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGB053N06SL

, P-1HGB059N08AHGP059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 4.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.2RDS(on),typ mW Enhanced Avalanche Ruggedness97 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.2. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf pdf_icon

HGB053N06SL

,HGB059N12S HGP059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.7RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectif

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Datasheet: HGB049N10S , HGP049N10S , HGB050N10A , HGP050N10A , HGB050N14S , HGP050N14S , HGB053N06S , HGP053N06S , SKD502T , HGP053N06SL , HGB055N12S , HGP055N12S , HGB057N15S , HGK057N15S , HGP057N15S , HGB058N08SL , HGP058N08SL .

Keywords - HGB053N06SL MOSFET datasheet

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