All MOSFET. HGK057N15S Datasheet

 

HGK057N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGK057N15S
   Marking Code: GK057N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 161 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-247

 HGK057N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK057N15S Datasheet (PDF)

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 hgb057n15s hgk057n15s hgp057n15s.pdf

HGK057N15S HGK057N15S

,HGB057N15S HGK057N15S P-1HGP057N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.3RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited)Application Synchr

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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