HGK057N15S Datasheet. Specs and Replacement
Type Designator: HGK057N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 161 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 463 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-247
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HGK057N15S substitution
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HGK057N15S datasheet
hgb057n15s hgk057n15s hgp057n15s.pdf
, HGB057N15S HGK057N15S P-1 HGP057N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.3 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4 RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5 RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited) Application Synchr... See More ⇒
Detailed specifications: HGP050N14S, HGB053N06S, HGP053N06S, HGB053N06SL, HGP053N06SL, HGB055N12S, HGP055N12S, HGB057N15S, IRF520, HGP057N15S, HGB058N08SL, HGP058N08SL, HGB059N08A, HGP059N08A, HGB059N12S, HGP059N12S, HGB059N12SL
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