All MOSFET. HGB068N15S Datasheet

 

HGB068N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB068N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 151 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO-263

 HGB068N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB068N15S Datasheet (PDF)

 ..1. Size:1045K  cn hunteck
 hgb068n15s hgp068n15s.pdf

HGB068N15S HGB068N15S

,HGB068N15S HGP068N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.4RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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