HGB068N15S Datasheet. Specs and Replacement
Type Designator: HGB068N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 151 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 463 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-263
📄📄 Copy
HGB068N15S substitution
- MOSFET ⓘ Cross-Reference Search
HGB068N15S datasheet
hgb068n15s hgp068n15s.pdf
, HGB068N15S HGP068N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.4 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7 RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard... See More ⇒
Detailed specifications: HGB058N08SL, HGP058N08SL, HGB059N08A, HGP059N08A, HGB059N12S, HGP059N12S, HGB059N12SL, HGP059N12SL, STP65NF06, HGP068N15S, HGB070N12S, HGP070N12S, HGB070N15S, HGK070N15S, HGP070N15S, HGB080N08SL, HGP080N08SL
Keywords - HGB068N15S MOSFET specs
HGB068N15S cross reference
HGB068N15S equivalent finder
HGB068N15S pdf lookup
HGB068N15S substitution
HGB068N15S replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
