HGB068N15S Datasheet and Replacement
Type Designator: HGB068N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 151 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 463 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-263
HGB068N15S substitution
HGB068N15S Datasheet (PDF)
hgb068n15s hgp068n15s.pdf

,HGB068N15S HGP068N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.4RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard
Datasheet: HGB058N08SL , HGP058N08SL , HGB059N08A , HGP059N08A , HGB059N12S , HGP059N12S , HGB059N12SL , HGP059N12SL , IRF1405 , HGP068N15S , HGB070N12S , HGP070N12S , HGB070N15S , HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL .
History: HGB120N10A | HGK110N20S
Keywords - HGB068N15S MOSFET datasheet
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History: HGB120N10A | HGK110N20S



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