HGB068N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB068N15S
Marking Code: GB068N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 151 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 463 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-263
HGB068N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB068N15S Datasheet (PDF)
..1. Size:1045K cn hunteck
hgb068n15s hgp068n15s.pdf
hgb068n15s hgp068n15s.pdf
,HGB068N15S HGP068N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.4RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard
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