HGP068N15S Datasheet. Specs and Replacement

Type Designator: HGP068N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 151 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 463 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO-220

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HGP068N15S datasheet

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HGP068N15S

, HGB068N15S HGP068N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.4 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7 RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard... See More ⇒

Detailed specifications: HGP058N08SL, HGB059N08A, HGP059N08A, HGB059N12S, HGP059N12S, HGB059N12SL, HGP059N12SL, HGB068N15S, IRF1405, HGB070N12S, HGP070N12S, HGB070N15S, HGK070N15S, HGP070N15S, HGB080N08SL, HGP080N08SL, HGB080N10A

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