All MOSFET. HGP068N15S Datasheet

 

HGP068N15S Datasheet and Replacement


   Type Designator: HGP068N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 151 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO-220
 

 HGP068N15S substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGP068N15S Datasheet (PDF)

 ..1. Size:1045K  cn hunteck
 hgb068n15s hgp068n15s.pdf pdf_icon

HGP068N15S

,HGB068N15S HGP068N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.4RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-220 5.7RDS(on),TYP mW Enhanced Avalanche Ruggedness 151 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard

Datasheet: HGP058N08SL , HGB059N08A , HGP059N08A , HGB059N12S , HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , NCEP15T14 , HGB070N12S , HGP070N12S , HGB070N15S , HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A .

History: PSMN5R8-30LL | TSM3548DCX6 | VBE1206N | 2SJ601Z | 80N10 | SIHFBC30A | SM6107PSU

Keywords - HGP068N15S MOSFET datasheet

 HGP068N15S cross reference
 HGP068N15S equivalent finder
 HGP068N15S lookup
 HGP068N15S substitution
 HGP068N15S replacement

 

 
Back to Top

 


 
.