HGB070N12S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB070N12S
Marking Code: GB070N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 133 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 438 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: TO-263
HGB070N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB070N12S Datasheet (PDF)
hgb070n12s hgp070n12s.pdf
, P-1HGB070N12SHGP070N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 6RDS(on),typ mW Enhanced Avalanche Ruggedness133 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H
hgb070n15s hgk070n15s hgp070n15s.pdf
HGB070N15S , HGK070N15S P-1HGP070N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 5.9RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free IDApplication Synchronous Rectification in SMPS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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