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HGB070N12S Spec and Replacement


   Type Designator: HGB070N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 133 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TO-263

 HGB070N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB070N12S Specs

 ..1. Size:968K  cn hunteck
 hgb070n12s hgp070n12s.pdf pdf_icon

HGB070N12S

, P-1 HGB070N12S HGP070N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 6 RDS(on),typ mW Enhanced Avalanche Ruggedness 133 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H... See More ⇒

 6.1. Size:1113K  cn hunteck
 hgb070n15s hgk070n15s hgp070n15s.pdf pdf_icon

HGB070N12S

HGB070N15S , HGK070N15S P-1 HGP070N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 5.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free ID Application Synchronous Rectification in SMPS... See More ⇒

Detailed specifications: HGB059N08A , HGP059N08A , HGB059N12S , HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , HGP068N15S , 7N60 , HGP070N12S , HGB070N15S , HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A .

History: STP6N50FI | HAF2008

Keywords - HGB070N12S MOSFET specs

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