HGB070N12S Datasheet. Specs and Replacement
Type Designator: HGB070N12S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 133 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 438 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: TO-263
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HGB070N12S substitution
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HGB070N12S datasheet
hgb070n12s hgp070n12s.pdf
, P-1 HGB070N12S HGP070N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 6 RDS(on),typ mW Enhanced Avalanche Ruggedness 133 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H... See More ⇒
hgb070n15s hgk070n15s hgp070n15s.pdf
HGB070N15S , HGK070N15S P-1 HGP070N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 5.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free ID Application Synchronous Rectification in SMPS... See More ⇒
Detailed specifications: HGB059N08A, HGP059N08A, HGB059N12S, HGP059N12S, HGB059N12SL, HGP059N12SL, HGB068N15S, HGP068N15S, 7N60, HGP070N12S, HGB070N15S, HGK070N15S, HGP070N15S, HGB080N08SL, HGP080N08SL, HGB080N10A, HGP080N10A
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