All MOSFET. HGB070N12S Datasheet

 

HGB070N12S Datasheet and Replacement


   Type Designator: HGB070N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 133 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TO-263
 

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HGB070N12S Datasheet (PDF)

 ..1. Size:968K  cn hunteck
 hgb070n12s hgp070n12s.pdf pdf_icon

HGB070N12S

, P-1HGB070N12SHGP070N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 6RDS(on),typ mW Enhanced Avalanche Ruggedness133 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain H

 6.1. Size:1113K  cn hunteck
 hgb070n15s hgk070n15s hgp070n15s.pdf pdf_icon

HGB070N12S

HGB070N15S , HGK070N15S P-1HGP070N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 5.9RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free IDApplication Synchronous Rectification in SMPS

Datasheet: HGB059N08A , HGP059N08A , HGB059N12S , HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , HGP068N15S , MMIS60R580P , HGP070N12S , HGB070N15S , HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A .

History: SVGP20110NSTR | SIHFBC30A | RSH110N03TB1 | ME35N06 | HM70N20T | SM6107PSU | TSM3548DCX6

Keywords - HGB070N12S MOSFET datasheet

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