All MOSFET. HGK070N15S Datasheet

 

HGK070N15S Datasheet and Replacement


   Type Designator: HGK070N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO-247
 

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HGK070N15S Datasheet (PDF)

 ..1. Size:1113K  cn hunteck
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HGK070N15S

HGB070N15S , HGK070N15S P-1HGP070N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 5.9RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free IDApplication Synchronous Rectification in SMPS

Datasheet: HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , HGP068N15S , HGB070N12S , HGP070N12S , HGB070N15S , IRF1405 , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M .

History: CSD17576Q5B | HUFA75339G3 | S45N17R | BF1118WR | AOI516 | P1560JF | LSGN06R034W3

Keywords - HGK070N15S MOSFET datasheet

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