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HGK070N15S Spec and Replacement


   Type Designator: HGK070N15S
   Marking Code: GK070N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO-247

 HGK070N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK070N15S Specs

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HGK070N15S

HGB070N15S , HGK070N15S P-1 HGP070N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 5.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free ID Application Synchronous Rectification in SMPS... See More ⇒

Detailed specifications: HGP059N12S , HGB059N12SL , HGP059N12SL , HGB068N15S , HGP068N15S , HGB070N12S , HGP070N12S , HGB070N15S , IRF830 , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M .

History: HGB070N15S | AP60N2R5J

Keywords - HGK070N15S MOSFET specs

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