HGK070N15S Datasheet and Replacement
Type Designator: HGK070N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 386 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO-247
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HGK070N15S Datasheet (PDF)
hgb070n15s hgk070n15s hgp070n15s.pdf

HGB070N15S , HGK070N15S P-1HGP070N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 5.9RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free IDApplication Synchronous Rectification in SMPS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: UF630G-TA3-T | HGP055N12S | SD10425JAA | IPD050N03L | MMF70R900PTH | ME4485-G | ME7845S
Keywords - HGK070N15S MOSFET datasheet
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History: UF630G-TA3-T | HGP055N12S | SD10425JAA | IPD050N03L | MMF70R900PTH | ME4485-G | ME7845S



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