HGK070N15S Datasheet. Specs and Replacement

Type Designator: HGK070N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO-247

  📄📄 Copy 

HGK070N15S substitution

- MOSFET ⓘ Cross-Reference Search

 

HGK070N15S datasheet

 ..1. Size:1113K  cn hunteck
hgb070n15s hgk070n15s hgp070n15s.pdf pdf_icon

HGK070N15S

HGB070N15S , HGK070N15S P-1 HGP070N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 5.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 6.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 6.2 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 140 A Lead Free ID Application Synchronous Rectification in SMPS... See More ⇒

Detailed specifications: HGP059N12S, HGB059N12SL, HGP059N12SL, HGB068N15S, HGP068N15S, HGB070N12S, HGP070N12S, HGB070N15S, IRF830, HGP070N15S, HGB080N08SL, HGP080N08SL, HGB080N10A, HGP080N10A, HGB080N10AL, HGP080N10AL, HGB082N10M

Keywords - HGK070N15S MOSFET specs

 HGK070N15S cross reference

 HGK070N15S equivalent finder

 HGK070N15S pdf lookup

 HGK070N15S substitution

 HGK070N15S replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs