All MOSFET. HGB090N06SL Equivalents Search

 

HGB090N06SL Spec and Replacement


   Type Designator: HGB090N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO-263

 HGB090N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB090N06SL Specs

 ..1. Size:800K  cn hunteck
 hgb090n06sl hgp090n06sl.pdf pdf_icon

HGB090N06SL

HGB090N06SL HGP090N06SL , P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 9.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 10.0 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.1. Size:816K  cn hunteck
 hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGB090N06SL

HGB095NE4SL , HGP095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.6 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.9 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.2. Size:926K  cn hunteck
 hgb098n10a hgp098n10a.pdf pdf_icon

HGB090N06SL

HGB098N10A , P-1 HGP098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness 70.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in ... See More ⇒

 9.3. Size:924K  cn hunteck
 hgb098n10al hgp098n10al.pdf pdf_icon

HGB090N06SL

, P-1 HGB098N10AL HGP098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8.4 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 11.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 68 A ID (Sil... See More ⇒

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Detailed specifications: HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S , HGP088N15S , IRFP064N , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S .

Keywords - HGB090N06SL MOSFET specs

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