All MOSFET. HGB090N06SL Datasheet

 

HGB090N06SL Datasheet and Replacement


   Type Designator: HGB090N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: TO-263
 

 HGB090N06SL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGB090N06SL Datasheet (PDF)

 ..1. Size:800K  cn hunteck
hgb090n06sl hgp090n06sl.pdf pdf_icon

HGB090N06SL

HGB090N06SL HGP090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V 9.7RDS(on),typ m Enhanced Avalanche Ruggedness7.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V 10.0RDS(on),typ m Lead Free, Halogen

 9.1. Size:816K  cn hunteck
hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGB090N06SL

HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen

 9.2. Size:926K  cn hunteck
hgb098n10a hgp098n10a.pdf pdf_icon

HGB090N06SL

HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 9.3. Size:924K  cn hunteck
hgb098n10al hgp098n10al.pdf pdf_icon

HGB090N06SL

, P-1HGB098N10ALHGP098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8.4RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested11.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free68 AID (Sil

Datasheet: HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S , HGP088N15S , 5N50 , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S .

History: IXFN32N100Q3 | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S

Keywords - HGB090N06SL MOSFET datasheet

 HGB090N06SL cross reference
 HGB090N06SL equivalent finder
 HGB090N06SL lookup
 HGB090N06SL substitution
 HGB090N06SL replacement

 

 
Back to Top

 


 
.