HGK105N15M Datasheet. Specs and Replacement

Type Designator: HGK105N15M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm

Package: TO-247

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HGK105N15M datasheet

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HGK105N15M

, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒

Detailed specifications: HGP095NE4SL, HGB098N10A, HGP098N10A, HGB098N10AL, HGP098N10AL, HGB100N12S, HGP100N12S, HGB105N15M, IRFP460, HGP105N15M, HGB105N15S, HGP105N15S, HGB105N15SL, HGP105N15SL, HGB110N10SL, HGP110N10SL, HGB110N20S

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