HGK105N15M Spec and Replacement
Type Designator: HGK105N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
Package: TO-247
HGK105N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK105N15M Specs
hgb105n15m hgk105n15m hgp105n15m.pdf
, P-1 HGB105N15M HGK105N15M HGP105N15M 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 8.5 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 8.8 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 120 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒
Detailed specifications: HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , IRFP460 , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
