HGK105N15M MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK105N15M
Marking Code: GK105N15M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
Package: TO-247
HGK105N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK105N15M Datasheet (PDF)
..1. Size:872K cn hunteck
hgb105n15m hgk105n15m hgp105n15m.pdf
hgb105n15m hgk105n15m hgp105n15m.pdf
, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch
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