All MOSFET. HGK105N15M Datasheet

 

HGK105N15M Datasheet and Replacement


   Type Designator: HGK105N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: TO-247
 

 HGK105N15M substitution

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HGK105N15M Datasheet (PDF)

 ..1. Size:872K  cn hunteck
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HGK105N15M

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

Datasheet: HGP095NE4SL , HGB098N10A , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , IRF640 , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S .

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