HGK110N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK110N20S
Marking Code: GK110N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
Package: TO-247
HGK110N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK110N20S Datasheet (PDF)
..1. Size:883K cn hunteck
hgb110n20s hgk110n20s hgp110n20s.pdf
hgb110n20s hgk110n20s hgp110n20s.pdf
,HGB110N20S HGK110N20S P-1HGP110N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth SwitchingTO-263 9.1RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 9.4RDS(on),typ m 100% UIS Tested, 100% Rg Tested132 AID (Sillicon Limited) Lead FreeApplication Synch
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