HGK110N20S Datasheet. Specs and Replacement

Type Designator: HGK110N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 132 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm

Package: TO-247

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HGK110N20S datasheet

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HGK110N20S

, HGB110N20S HGK110N20S P-1 HGP110N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching TO-263 9.1 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 9.4 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 132 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒

Detailed specifications: HGP105N15M, HGB105N15S, HGP105N15S, HGB105N15SL, HGP105N15SL, HGB110N10SL, HGP110N10SL, HGB110N20S, IRFB4227, HGP110N20S, HGB115N15S, HGP115N15S, HGB120N10A, HGP120N10A, HGB130N12S, HGP130N12S, HGB155N15S

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