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HGK110N20S Spec and Replacement


   Type Designator: HGK110N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 132 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: TO-247

 HGK110N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK110N20S Specs

 ..1. Size:883K  cn hunteck
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HGK110N20S

, HGB110N20S HGK110N20S P-1 HGP110N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching TO-263 9.1 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 9.4 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 132 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒

Detailed specifications: HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S , IRFB4227 , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S .

Keywords - HGK110N20S MOSFET specs

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