All MOSFET. HGK110N20S Datasheet

 

HGK110N20S Datasheet and Replacement


   Type Designator: HGK110N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 132 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: TO-247
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HGK110N20S Datasheet (PDF)

 ..1. Size:883K  cn hunteck
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HGK110N20S

,HGB110N20S HGK110N20S P-1HGP110N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth SwitchingTO-263 9.1RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 9.4RDS(on),typ m 100% UIS Tested, 100% Rg Tested132 AID (Sillicon Limited) Lead FreeApplication Synch

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - HGK110N20S MOSFET datasheet

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