HGB120N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB120N10A
Marking Code: GB120N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 59 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-263
HGB120N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB120N10A Datasheet (PDF)
..1. Size:919K cn hunteck
hgb120n10a hgp120n10a.pdf
hgb120n10a hgp120n10a.pdf
,HGB120N10A HGP120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 12.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 12.0RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a
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