All MOSFET. HGB120N10A Datasheet

 

HGB120N10A Datasheet and Replacement


   Type Designator: HGB120N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-263
 

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HGB120N10A Datasheet (PDF)

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HGB120N10A

,HGB120N10A HGP120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 12.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 12.0RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a

Datasheet: HGP105N15SL , HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , IRFP250N , HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL .

History: SI2305CDS | SPP03N60C3 | CEP15A03 | CJQ4406 | TSM2312CX | 2N7002NXBK | AM60N10-70PC

Keywords - HGB120N10A MOSFET datasheet

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