HGP120N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP120N10A
Marking Code: GP120N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 59 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: TO-220
HGP120N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP120N10A Datasheet (PDF)
..1. Size:919K cn hunteck
hgb120n10a hgp120n10a.pdf
hgb120n10a hgp120n10a.pdf
,HGB120N10A HGP120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 12.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 12.0RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: WMK119N12LG4
