HGP120N10A Datasheet. Specs and Replacement

Type Designator: HGP120N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 59 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-220

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HGP120N10A datasheet

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HGP120N10A

, HGB120N10A HGP120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 12.0 RDS(on),typ mW Enhanced Avalanche Ruggedness 59 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

Detailed specifications: HGB110N10SL, HGP110N10SL, HGB110N20S, HGK110N20S, HGP110N20S, HGB115N15S, HGP115N15S, HGB120N10A, 2N7000, HGB130N12S, HGP130N12S, HGB155N15S, HGP155N15S, HGB170N10A, HGP170N10A, HGB170N10AL, HGP170N10AL

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