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HGP120N10A Spec and Replacement


   Type Designator: HGP120N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-220

 HGP120N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP120N10A Specs

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HGP120N10A

, HGB120N10A HGP120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 12.0 RDS(on),typ mW Enhanced Avalanche Ruggedness 59 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

Detailed specifications: HGB110N10SL , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , 2N7000 , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL .

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