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HGP130N12S Spec and Replacement


   Type Designator: HGP130N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: TO-220

 HGP130N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP130N12S Specs

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HGP130N12S

, HGB130N12S HGP130N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-263 10 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 10.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 74 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 0.1. Size:910K  cn hunteck
 hgp130n12sl.pdf pdf_icon

HGP130N12S

P-1 HGP130N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 71 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain... See More ⇒

Detailed specifications: HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , HGB130N12S , 8205A , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S .

History: HGB100N12S

Keywords - HGP130N12S MOSFET specs

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