All MOSFET. HGP170N10A Datasheet

 

HGP170N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP170N10A
   Marking Code: GP170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-220

 HGP170N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP170N10A Datasheet (PDF)

 ..1. Size:920K  cn hunteck
 hgb170n10a hgp170n10a.pdf

HGP170N10A HGP170N10A

HGB170N10A , P-1HGP170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 16.7RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 17RDS(on),typ mW Enhanced Avalanche Ruggedness38.6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 0.1. Size:922K  cn hunteck
 hgb170n10al hgp170n10al.pdf

HGP170N10A HGP170N10A

, P-1HGB170N10AL HGP170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability22RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45.3 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top