HGB170N10AL Spec and Replacement
Type Designator: HGB170N10AL
Marking Code: GB170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 147 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0257 Ohm
Package: TO-263
HGB170N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB170N10AL Specs
hgb170n10al hgp170n10al.pdf
, P-1 HGB170N10AL HGP170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 45.3 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒
Detailed specifications: HGB120N10A , HGP120N10A , HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , AON7408 , HGP170N10AL , HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S .
History: JMSH1504NE
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: JMSH1504NE
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