All MOSFET. HGB190N15S Datasheet

 

HGB190N15S Datasheet and Replacement


   Type Designator: HGB190N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0187 Ohm
   Package: TO-263
 

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HGB190N15S Datasheet (PDF)

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 hgb190n15s hgp190n15s.pdf pdf_icon

HGB190N15S

HGB190N15S HGP190N15S P-1,150V N-Ch Power MOSFET150 VVDSFeatureTO-263 15.7RDS(on),typ m Optimized for high speed smooth switchingTO-220 16RDS(on),typ m Enhanced Body diode dv/dt capability80 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

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 hgb195n15s hgp195n15s.pdf pdf_icon

HGB190N15S

, P-1HGB195N15SHGP195N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 16.0RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 16.3RDS(on),typ mW Enhanced Avalanche Ruggedness59 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , 12N60 , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S .

History: AP6A100M | AP4435GH | LSGC03R020 | STD5NK60ZT4 | MPSU65M390 | 2SK3472 | IXFH18N90P

Keywords - HGB190N15S MOSFET datasheet

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