HGB190N15S Spec and Replacement
Type Designator: HGB190N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0187 Ohm
Package: TO-263
HGB190N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB190N15S Specs
hgb195n15s hgp195n15s.pdf
, P-1 HGB195N15S HGP195N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 16.0 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 16.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 59 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
Detailed specifications: HGB130N12S , HGP130N12S , HGB155N15S , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , STP75NF75 , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
