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HGB200N10SL Spec and Replacement


   Type Designator: HGB200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0197 Ohm
   Package: TO-263

 HGB200N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB200N10SL Specs

 ..1. Size:821K  cn hunteck
 hgb200n10sl hgp200n10sl.pdf pdf_icon

HGB200N10SL

HGB200N10SL HGP200N10SL P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic Level 15.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 19.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 15.5 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 20.0 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 47 ... See More ⇒

Detailed specifications: HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , IRLB4132 , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL .

Keywords - HGB200N10SL MOSFET specs

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