HGB200N10SL Datasheet. Specs and Replacement

Type Designator: HGB200N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0197 Ohm

Package: TO-263

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HGB200N10SL datasheet

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HGB200N10SL

HGB200N10SL HGP200N10SL P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic Level 15.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 19.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 15.5 RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested 20.0 RDS(on),typ VGS=4.5V m Lead Free, Halogen Free 47 ... See More ⇒

Detailed specifications: HGB170N10A, HGP170N10A, HGB170N10AL, HGP170N10AL, HGB190N15S, HGP190N15S, HGB195N15S, HGP195N15S, IRLB4132, HGP200N10SL, HGB210N20S, HGK210N20S, HGP210N20S, HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL

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