All MOSFET. HGB200N10SL Datasheet

 

HGB200N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB200N10SL
   Marking Code: GB200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19.9 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0197 Ohm
   Package: TO-263

 HGB200N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB200N10SL Datasheet (PDF)

 ..1. Size:821K  cn hunteck
 hgb200n10sl hgp200n10sl.pdf

HGB200N10SL HGB200N10SL

HGB200N10SL HGP200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level15.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability19.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness15.5RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested20.0RDS(on),typ VGS=4.5V m Lead Free, Halogen Free47

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