All MOSFET. HGP200N10SL Datasheet

 

HGP200N10SL Datasheet and Replacement


   Type Designator: HGP200N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0197 Ohm
   Package: TO-220
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HGP200N10SL Datasheet (PDF)

 ..1. Size:821K  cn hunteck
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HGP200N10SL

HGB200N10SL HGP200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level15.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability19.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness15.5RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested20.0RDS(on),typ VGS=4.5V m Lead Free, Halogen Free47

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History: SQ3419EEV | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2

Keywords - HGP200N10SL MOSFET datasheet

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