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HGB210N20S Spec and Replacement


   Type Designator: HGB210N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO-263

 HGB210N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB210N20S Specs

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HGB210N20S

, P-1 HGB210N20S HGK210N20S HGP210N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching 16 RDS(on),typ mW Enhanced Body diode dv/dt capability 70 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-263 TO-220 Hard Switching and Hig... See More ⇒

Detailed specifications: HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S , HGB195N15S , HGP195N15S , HGB200N10SL , HGP200N10SL , K3569 , HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S .

Keywords - HGB210N20S MOSFET specs

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