HGB210N20S Datasheet. Specs and Replacement
Type Designator: HGB210N20S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO-263
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HGB210N20S substitution
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HGB210N20S datasheet
hgb210n20s hgk210n20s hgp210n20s.pdf
, P-1 HGB210N20S HGK210N20S HGP210N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching 16 RDS(on),typ mW Enhanced Body diode dv/dt capability 70 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-263 TO-220 Hard Switching and Hig... See More ⇒
Detailed specifications: HGB170N10AL, HGP170N10AL, HGB190N15S, HGP190N15S, HGB195N15S, HGP195N15S, HGB200N10SL, HGP200N10SL, K3569, HGK210N20S, HGP210N20S, HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S
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