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HGP220N25S Spec and Replacement


   Type Designator: HGP220N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0219 Ohm
   Package: TO-220

 HGP220N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP220N25S Specs

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HGP220N25S

, HGB220N25S HGK220N25S P-1 HGP220N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching TO-263 16.3 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 15.5 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 16.6 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 93 A ID (Sillicon Limited) Lead Free 180 A ID (Package L... See More ⇒

Detailed specifications: HGP195N15S , HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S , K4145 , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S .

History: PMV15UNEA | HGK220N25S

Keywords - HGP220N25S MOSFET specs

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