All MOSFET. HGP220N25S Datasheet

 

HGP220N25S Datasheet and Replacement


   Type Designator: HGP220N25S
   Marking Code: GP220N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0219 Ohm
   Package: TO-220
 

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HGP220N25S Datasheet (PDF)

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HGP220N25S

,HGB220N25S HGK220N25S P-1HGP220N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth SwitchingTO-263 16.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 15.5RDS(on),typ m Enhanced Avalanche RuggednessTO-220 16.6RDS(on),typ m 100% UIS Tested, 100% Rg Tested93 AID (Sillicon Limited) Lead Free180 AID (Package L

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