HGB290N10SL Datasheet. Specs and Replacement

Type Designator: HGB290N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0287 Ohm

Package: TO-263

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HGB290N10SL datasheet

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HGB290N10SL

HGB290N10SL , HGP290N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 22.7 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 27.7 RDS(on),typ m Enhanced Avalanche Ruggedness 23.0 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 28 RDS(on),typ m Lead Free, Hal... See More ⇒

Detailed specifications: HGB200N10SL, HGP200N10SL, HGB210N20S, HGK210N20S, HGP210N20S, HGB220N25S, HGK220N25S, HGP220N25S, 13N50, HGP290N10SL, HGB320N20S, HGK320N20S, HGP320N20S, HGB390N25S, HGP390N25S, HGK390N25S, HGB480N15M

Keywords - HGB290N10SL MOSFET specs

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