All MOSFET. HGB290N10SL Datasheet

 

HGB290N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB290N10SL
   Marking Code: GB290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0287 Ohm
   Package: TO-263

 HGB290N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB290N10SL Datasheet (PDF)

 ..1. Size:818K  cn hunteck
 hgb290n10sl hgp290n10sl.pdf

HGB290N10SL HGB290N10SL

HGB290N10SL , HGP290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V27.7RDS(on),typ m Enhanced Avalanche Ruggedness23.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V28RDS(on),typ m Lead Free, Hal

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BUK662R4-40C | BUK653R4-40C

 

 
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