HGB290N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGB290N10SL
Marking Code: GB290N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 31 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0287 Ohm
Package: TO-263
HGB290N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB290N10SL Datasheet (PDF)
..1. Size:818K cn hunteck
hgb290n10sl hgp290n10sl.pdf
hgb290n10sl hgp290n10sl.pdf
HGB290N10SL , HGP290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V27.7RDS(on),typ m Enhanced Avalanche Ruggedness23.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V28RDS(on),typ m Lead Free, Hal
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
