All MOSFET. HGB290N10SL Datasheet

 

HGB290N10SL Datasheet and Replacement


   Type Designator: HGB290N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0287 Ohm
   Package: TO-263
 

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HGB290N10SL Datasheet (PDF)

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HGB290N10SL

HGB290N10SL , HGP290N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level22.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V27.7RDS(on),typ m Enhanced Avalanche Ruggedness23.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V28RDS(on),typ m Lead Free, Hal

Datasheet: HGB200N10SL , HGP200N10SL , HGB210N20S , HGK210N20S , HGP210N20S , HGB220N25S , HGK220N25S , HGP220N25S , TK10A60D , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , HGB480N15M .

History: STF6N60M2 | 2SK1887 | UT3401G-AE3-R | SGSP461 | IPB60R070CFD7 | SE2102M | WMM14N65C4

Keywords - HGB290N10SL MOSFET datasheet

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