All MOSFET. HGB320N20S Datasheet

 

HGB320N20S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB320N20S
   Marking Code: GB320N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-263

 HGB320N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB320N20S Datasheet (PDF)

 ..1. Size:875K  cn hunteck
 hgb320n20s hgk320n20s hgp320n20s.pdf

HGB320N20S HGB320N20S

,HGB320N20S HGP320N20S P-1HGK320N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power SwitchingTO-263 28RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 28RDS(on),typ m Enhanced Avalanche RuggednessTO-220 28RDS(on),typ m 100% UIS Tested, 100% Rg Tested51 AID Lead FreeApplication Synchronous Rectification in SMPS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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