HGB320N20S Datasheet. Specs and Replacement

Type Designator: HGB320N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-263

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HGB320N20S datasheet

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HGB320N20S

, HGB320N20S HGP320N20S P-1 HGK320N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Switching TO-263 28 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 28 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 28 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 51 A ID Lead Free Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGB210N20S, HGK210N20S, HGP210N20S, HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, 12N60, HGK320N20S, HGP320N20S, HGB390N25S, HGP390N25S, HGK390N25S, HGB480N15M, HGP480N15M, HGB640N25S

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