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HGB390N25S Spec and Replacement


   Type Designator: HGB390N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 172 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-263

 HGB390N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB390N25S Specs

 ..1. Size:1050K  cn hunteck
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HGB390N25S

, P-1 HGB390N25S HGP390N25S HGK390N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching 31 RDS(on),typ mW Enhanced Body diode dv/dt capability 50 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit... See More ⇒

Detailed specifications: HGB220N25S , HGK220N25S , HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , IRFB3607 , HGP390N25S , HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A .

History: HGB640N25S | HGB070N12S | STP6N50FI | HAF2008

Keywords - HGB390N25S MOSFET specs

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