All MOSFET. HGB390N25S Datasheet

 

HGB390N25S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB390N25S
   Marking Code: GB390N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 172 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
   Package: TO-263

 HGB390N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB390N25S Datasheet (PDF)

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 hgb390n25s hgp390n25s hgk390n25s.pdf

HGB390N25S HGB390N25S

, P-1HGB390N25S HGP390N25SHGK390N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching31RDS(on),typ mW Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE70T260D

 

 
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