HGB390N25S Datasheet. Specs and Replacement

Type Designator: HGB390N25S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 172 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-263

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HGB390N25S datasheet

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HGB390N25S

, P-1 HGB390N25S HGP390N25S HGK390N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching 31 RDS(on),typ mW Enhanced Body diode dv/dt capability 50 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit... See More ⇒

Detailed specifications: HGB220N25S, HGK220N25S, HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S, HGK320N20S, HGP320N20S, IRFB3607, HGP390N25S, HGK390N25S, HGB480N15M, HGP480N15M, HGB640N25S, HGK640N25S, HGP640N25S, HGD028NE6A

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