HGP390N25S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP390N25S
Marking Code: GP390N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 172 pF
Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
Package: TO-220
HGP390N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP390N25S Datasheet (PDF)
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hgb390n25s hgp390n25s hgk390n25s.pdf
hgb390n25s hgp390n25s hgk390n25s.pdf
, P-1HGB390N25S HGP390N25SHGK390N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching31RDS(on),typ mW Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit
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