All MOSFET. HGP390N25S Datasheet

 

HGP390N25S Datasheet and Replacement


   Type Designator: HGP390N25S
   Marking Code: GP390N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 172 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-220
 

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HGP390N25S Datasheet (PDF)

 ..1. Size:1050K  cn hunteck
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HGP390N25S

, P-1HGB390N25S HGP390N25SHGK390N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching31RDS(on),typ mW Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - HGP390N25S MOSFET datasheet

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