HGD028NE6AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD028NE6AL
Marking Code: GD028NE6AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 1625 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm
Package: TO-252
HGD028NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD028NE6AL Datasheet (PDF)
hgd028ne6al.pdf
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hgd028ne6a.pdf
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