All MOSFET. HGD028NE6AL Datasheet

 

HGD028NE6AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD028NE6AL
   Marking Code: GD028NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1625 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-252

 HGD028NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD028NE6AL Datasheet (PDF)

 ..1. Size:900K  cn hunteck
 hgd028ne6al.pdf

HGD028NE6AL HGD028NE6AL

HGD028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness168 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 4.1. Size:902K  cn hunteck
 hgd028ne6a.pdf

HGD028NE6AL HGD028NE6AL

HGD028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H

 9.1. Size:825K  cn hunteck
 hgd029ne4sl.pdf

HGD028NE6AL HGD028NE6AL

HGD029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

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