HGD029NE4SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD029NE4SL
Marking Code: GD029NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1367 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-252
HGD029NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD029NE4SL Datasheet (PDF)
hgd029ne4sl.pdf
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hgd028ne6al.pdf
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hgd028ne6a.pdf
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