HGD029NE4SL Spec and Replacement
Type Designator: HGD029NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1367 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-252
HGD029NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD029NE4SL Specs
hgd029ne4sl.pdf
HGD029NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 2.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 3.2 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 156 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒
hgd028ne6al.pdf
HGD028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 168 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒
hgd028ne6a.pdf
HGD028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and H... See More ⇒
Detailed specifications: HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , BS170 , HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A .
History: HGD035N08A
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History: HGD035N08A
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