HGD029NE4SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD029NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1367 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-252
HGD029NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD029NE4SL Datasheet (PDF)
hgd029ne4sl.pdf
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hgd028ne6al.pdf
HGD028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness168 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
hgd028ne6a.pdf
HGD028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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