All MOSFET. HGD050N10A Datasheet

 

HGD050N10A Datasheet and Replacement


   Type Designator: HGD050N10A
   Marking Code: GD050N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 47 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 571 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO-252
 

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HGD050N10A Datasheet (PDF)

 ..1. Size:1109K  cn hunteck
 hgd050n10a.pdf pdf_icon

HGD050N10A

P-1HGD050N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness115 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsTO-

 9.1. Size:908K  cn hunteck
 hgd053n06sl hgi053n06sl.pdf pdf_icon

HGD050N10A

HGD053N06SL , HGI053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.2. Size:830K  cn hunteck
 hgd058n08sl.pdf pdf_icon

HGD050N10A

HGD058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness110 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification

 9.3. Size:964K  cn hunteck
 hgd059n08al hgi059n08al.pdf pdf_icon

HGD050N10A

, P-1HGD059N08ALHGI059N08AL80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness88 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i

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