HGD050N10A Datasheet. Specs and Replacement
Type Designator: HGD050N10A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 571 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO-252
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HGD050N10A substitution
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HGD050N10A datasheet
hgd050n10a.pdf
P-1 HGD050N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 4.8 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 115 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools TO-... See More ⇒
hgd058n08sl.pdf
HGD058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 110 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒
hgd059n08al hgi059n08al.pdf
, P-1 HGD059N08AL HGI059N08AL 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 88 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒
Detailed specifications: HGD035N08A, HGD035N08AL, HGD040N06S, HGD040N06SL, HGI040N06SL, HGD045NE4SL, HGD046NE6A, HGD046NE6AL, 18N50, HGD053N06S, HGD053N06SL, HGI053N06SL, HGD058N08SL, HGD059N08A, HGI059N08A, HGD059N08AL, HGI059N08AL
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