HGD077N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD077N10SL
Marking Code: GD077N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
Package: TO-252
HGD077N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD077N10SL Datasheet (PDF)
..1. Size:918K cn hunteck
hgd077n10sl hgi077n10sl.pdf
hgd077n10sl hgi077n10sl.pdf
HGD077N10SL , HGI077N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature6.4RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level7.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability105 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeAppli
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