HGD077N10SL Datasheet. Specs and Replacement

Type Designator: HGD077N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm

Package: TO-252

  📄📄 Copy 

HGD077N10SL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGD077N10SL datasheet

 ..1. Size:918K  cn hunteck
 hgd077n10sl hgi077n10sl.pdf pdf_icon

HGD077N10SL

HGD077N10SL , HGI077N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 6.4 RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level 7.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 105 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Appli... See More ⇒

Detailed specifications: HGD053N06S, HGD053N06SL, HGI053N06SL, HGD058N08SL, HGD059N08A, HGI059N08A, HGD059N08AL, HGI059N08AL, 75N75, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL, HGI080N10AL, HGD090NE6A, HGI090NE6A, HGD090NE6AL

Keywords - HGD077N10SL MOSFET specs

 HGD077N10SL cross reference

 HGD077N10SL equivalent finder

 HGD077N10SL pdf lookup

 HGD077N10SL substitution

 HGD077N10SL replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs