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HGD077N10SL Spec and Replacement


   Type Designator: HGD077N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: TO-252

 HGD077N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD077N10SL Specs

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HGD077N10SL

HGD077N10SL , HGI077N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 6.4 RDS(on),typ VGS=10V m Optimized for high speed switching,Logic level 7.8 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 105 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Appli... See More ⇒

Detailed specifications: HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , HGI059N08A , HGD059N08AL , HGI059N08AL , 75N75 , HGI077N10SL , HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL , HGD090NE6A , HGI090NE6A , HGD090NE6AL .

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