SP2112 MOSFET Datasheet: N-Ch, 100V, 1.2A. Full specification with pinout and replacement list

SP2112 Specs and Replacement

   Type Designator: SP2112
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: DFN3X3

SP2112 substitution

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SP2112 datasheet

..1. Size:119K samhop
sp2112.pdf pdf_icon

Green Product SP2112 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 390 @ VGS=10V Suface Mount Package. 100V 1.2A 430 @ VGS=4.5V D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒

9.1. Size:104K samhop
sp2110.pdf pdf_icon

Green Product SP2110 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 390 @ VGS=10V Suface Mount Package. 100V 1.6A 460 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒

Detailed specifications: SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , IRF520 , FDS89161 , SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 , FDS8935 .